Master of Science (MSc)
Mathematics for Science and Finance
Faculty of Science
Marek S. Wartak
We present a comprehensive set of computations of effective mass theory for both the Kane's parabolic band approximation and Luttinger-Kohn's valence band mixing approximation. We generalize the kp method to be able to evaluate band structures for the materials such as zincblende InGaAsN and GaAsBi compounds used in long wavelength lasers and wurtzite materials used in short wavelength lasers. We investigate methodology to study band structure of semiconductors that are grown away from natural direction. The strain influence is introduced via Bir and Pikus model. It is expected that band structure is strongly dependent on direction of crystal growth and the strain plays here an important role. The energy levels, and consequently the optical matrix elements, change with orientation. The optical matrix elements are directly involved in optical gain calculations, so the growth orientation provides a tool, to control gain in semiconductor laser.
Ivashev, Igor, "Theoretical investigations of Zinc Blende and Wurtzite semiconductor quantum wells on the rotated substrates" (2016). Theses and Dissertations (Comprehensive). 1833.